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參數(shù)資料
| 型號： | GSC4407 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 310K |
| 代理商： | GSC4407 |
GSC4407
Page: 4/4
ISSUED DATE :2006/04/20
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GSC4409 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4410 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411DY | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GSC4409 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4410 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411DY | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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