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參數(shù)資料
| 型號： | GSC4404 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 338K |
| 代理商： | GSC4404 |
GSC4404
Page: 2/4
ISSUED DATE :2006/10/27
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.7
-
1.4
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
16
-
S
VDS=5V, ID=5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=55 )
:
IDSS
-
5
uA
VDS=24V, VGS=0
-
24
VGS=10V, ID=8.5A
-
30
VGS=4.5V, ID=8.5A
Static Drain-Source On-Resistance
RDS(ON)
-
48
m
VGS=2.5V, ID=5.0A
Total Gate Charge2
Qg
-
9.7
12
Gate-Source Charge
Qgs
-
1.63
-
Gate-Drain (“Miller”) Change
Qgd
-
3.1
-
nC
ID=8.5A
VDS=15V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
3.3
-
Rise Time
Tr
-
4.7
-
Turn-off Delay Time
Td(off)
-
26
-
Fall Time
Tf
-
4.1
-
ns
VDS=15V
VGS=10V
RG=6
RL=1.8
Input Capacitance
Ciss
-
857
1050
Output Capacitance
Coss
-
97
-
Reverse Transfer Capacitance
Crss
-
71
-
pF
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.0
V
IS=1.0A, VGS=0V
Continuous Source Current (Body Diode)
IS
-
4.3
A
VD= VG=0V, VS=1.0V
Reverse Recovery Time2
Trr
-
15
-
ns
Reverse Recovery Charge
Qrr
-
8.6
-
nC
IS=5.0A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
:
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| GSC4407 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4409 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4410 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411DY | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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