參數(shù)資料
型號(hào)： GS882V36BD-300I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述： 256K X 36 CACHE SRAM, 5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù)： 14/36頁(yè)
文件大?。?/td> 732K
代理商： GS882V36BD-300I
GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/36
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS882V36BD-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BD-333I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS882V36BD-333 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 4.5NS/2.5NS 165FBGA - Trays
GS882V36BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 6.5NS/3NS 119FBGA - Trays
GS882V36BGB-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 6.5NS/3NS 119FBGA - Trays
GS882V36BGD-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 7.5NS/3.8NS 165FBGA - Trays
GS882V37BB-133I 制造商:GSI Technology 功能描述:256KX36(9 MEG)SYNCH BURST,"+1 SERIES" SCD, JTAG, FLEXDRIVE - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*