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| 型號： | GS882V18BGB-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 5.5 ns, PBGA119 |
| 封裝： | LEAD FREE, FBGA-119 |
| 文件頁數(shù)： | 14/36頁 |
| 文件大?。?/td> | 732K |
| 代理商： | GS882V18BGB-250 |
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GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/36
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS882V18BGB-250I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-300 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-3005I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-333 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-333I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS882V18BGB-300 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5NS/2.5NS 119FBGA - Trays |
| GS882V18BGD-333 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 4.5NS/2.5NS 165FBGA - Trays |
| GS882V36BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 7.5NS/3.8NS 119FBGA - Trays |
| GS882V36BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 7.5NS/3.8NS 119FBGA - Trays |
| GS882V36BB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 6.5NS/3NS 119FBGA - Trays |
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