參數(shù)資料
型號(hào): GS882V18BD-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 13/36頁(yè)
文件大?。?/td> 732K
代理商: GS882V18BD-200I
GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/36
2004, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS882V18BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-300I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS882V18BD-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
GS882V18BD-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
GS882V18BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 119FBGA - Trays
GS882V18BGB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 119FBGA - Trays
GS882V18BGB-300 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5NS/2.5NS 119FBGA - Trays