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參數(shù)資料
| 型號： | GS88237BGB-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| 中文描述： | 256K X 36 CACHE SRAM, 2.3 ns, PBGA119 |
| 封裝： | ROHS COMPLIANT, FPBGA-119 |
| 文件頁數(shù)： | 1/29頁 |
| 文件大?。?/td> | 577K |
| 代理商： | GS88237BGB-250I |
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GS88237BB/D-333/300/250/200
256K x 36
9Mb SCD/DCD Sync Burst SRAM
333 MHz–200 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
119- & 165-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.04 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/29
2002, GSI Technology
Features
Single/Dual Cycle Deselect selectable
IEEE 1149.1 JTAG-compatible Boundary Scan
ZQ mode pin for user-selectable high/low output drive
2.5 V or 3.3 V +10%/–10% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to SCD x18/x36 Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 119-bump and 165-bump BGA packages
Pb-Free 119-bump and 165-bump BGA packages available
Functional Description
Applications
The GS88237BB/D is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx,
BW, GW) are synchronous and are controlled by a positive-
edge-triggered clock input (CK). Output enable (G) and power
down control (ZZ) are asynchronous inputs. Burst cycles can
be initiated with either ADSP or ADSC inputs. In Burst mode,
subsequent burst addresses are generated internally and are
controlled by ADV. The burst address counter may be
configured to count in either linear or interleave order with the
Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
SCD and DCD Pipelined Reads
The GS88237BB/D is a SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM.
DCD SRAMs pipeline disable commands to the same degree
as read commands. SCD SRAMs pipeline deselect commands
one stage less than read commands. SCD RAMs begin turning
off their outputs immediately after the deselect command has
been captured in the input registers. DCD RAMs hold the
deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user
may configure this SRAM for either mode of operation using
the SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
FLXDrive
The ZQ pin allows selection between high drive strength (ZQ
low) for multi-drop bus applications and normal drive strength
(ZQ floating or high) point-to-point applications. See the
Output Driver Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS88237BB/D operates on a 2.5 V or 3.3 V power supply.
All input are 3.3 V and 2.5 V compatible. Separate output
power (V
DDQ
) pins are used to decouple output noise from the
internal circuits and are 3.3 V and 2.5 V compatible.
Parameter Synopsis
-333
2.0
3.0
435
435
-300
2.2
3.3
395
395
-250
2.3
4.0
330
330
-200
2.7
5.0
270
270
Unit
ns
ns
mA
mA
Pipeline
3-1-1-1
3.3 V
2.5 V
t
KQ
tCycle
Curr
(x36)
Curr
(x36)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS88237BGB-300 | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BGB-300I | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BGB-333 | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BGB-333I | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BGD-300 | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS88237CB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays |
| GS88237CB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays |
| GS88237CB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays |
| GS88237CB-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays |
| GS88237CB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays |
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