參數資料
型號: GS88236BD-150
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數: 12/37頁
文件大小: 751K
代理商: GS88236BD-150
GS88218/36BB/D-333/300/250/200/150
Rev: 1.02 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/37
2002, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關PDF資料
PDF描述
GS88236BD-150I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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