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| 型號： | GS88236AB-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| 中文描述： | 256K X 36 CACHE SRAM, 6.5 ns, PBGA119 |
| 封裝： | PLASTIC, BGA-119 |
| 文件頁數(shù)： | 26/38頁 |
| 文件大?。?/td> | 744K |
| 代理商： | GS88236AB-200 |
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GS88218/36AB/D-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 11/2004
26/38
2001, GSI Technology
JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
0
1
1
1
1
1
Bit #
x72
x36
x32
x18
x16
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
X
X
X
X
0
0
0
0
0
0
0
0
0
0
X
X
X
X
0
0
0
X
1
0
0
1
0
0
X
X
X
X
0
0
0
0
0
0
0
0
0
0
X
X
X
X
0
0
0
X
1
0
0
1
0
0
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
0
0
1
0
1
0
0
0
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
Instruction Register
ID Code Register
·
31 30 29
Boundary Scan Register
0
1
2
0
· · ·
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
1
·
1
0
·
·
·
·
·
·
·
·
·
Control Signals
·
相關PDF資料 |
PDF描述 |
|---|---|
| GS88236AB-200I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-225 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-225I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-250 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-250I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS88236CB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays |
| GS88236CB-200I | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays |
| GS88236CB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays |
| GS88236CB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 119FPBGA - Trays |
| GS88236CD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays |
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