參數(shù)資料
型號: GS88218BB-150V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: FPBGA-119
文件頁數(shù): 16/35頁
文件大?。?/td> 863K
代理商: GS88218BB-150V
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
-150
Unit
0
to 70°C
40
to
85°C
0
to 70°C
40
to 85°C
0
to 70°C
40
to 85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
(x32/x36)
Pipeline
I
DD
I
DDQ
200
30
220
30
170
25
190
25
140
20
160
20
mA
Flow Through
I
DD
I
DDQ
160
25
180
25
140
20
160
20
130
15
150
15
mA
(x18)
Pipeline
I
DD
I
DDQ
185
15
205
15
155
15
175
15
130
10
150
10
mA
Flow Through
I
DD
I
DDQ
145
15
165
15
130
10
150
10
120
8
140
8
mA
Standby
Current
ZZ
V
DD
– 0.2 V
Pipeline
I
SB
40
50
40
50
40
50
mA
Flow Through
I
SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
Pipeline
I
DD
85
90
75
80
60
65
mA
Flow Through
I
DD
60
65
50
55
50
55
mA
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
16/35
2002, GSI Technology
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD1
, V
DD2
, V
DDQ1
, and V
DDQ2
operation.
All parameters listed are worst case scenario.
相關PDF資料
PDF描述
GS88218BB-200IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-200V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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