參數(shù)資料
型號(hào): GS88218BB-150IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: FPBGA-119
文件頁數(shù): 21/35頁
文件大小: 863K
代理商: GS88218BB-150IV
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
21/35
2002, GSI Technology
Flow Through Mode Timing (DCD)
Begin
Read A
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Deselect
tHZ
tKQX
tLZ
tH
tS
tOHZ
tOE
tKQ
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
ADSC initiated read
tS
tH
tS
tKC
tKL
tKH
A
B
C
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
E2 and E3 only sampled with ADSP and ADSC
E1 masks ADSP
Deselected with E1
E1 masks ADSP
Fixed High
CK
ADSP
ADSC
ADV
Ao–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關(guān)PDF資料
PDF描述
GS88218BB-150V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-200IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-200V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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