參數(shù)資料
型號(hào): GS88218BB-150I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: FPBGA-119
文件頁(yè)數(shù): 13/37頁(yè)
文件大?。?/td> 751K
代理商: GS88218BB-150I
GS88218/36BB/D-333/300/250/200/150
Rev: 1.02 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/37
2002, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS88236BD-150 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-150I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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