參數(shù)資料
型號: GS88218AB
廠商: GSI TECHNOLOGY
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 為512k × 18,256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 16/38頁
文件大?。?/td> 744K
代理商: GS88218AB
GS88218/36AB/D-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 11/2004
16/38
2001, GSI Technology
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
50% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
相關(guān)PDF資料
PDF描述
GS88236AB-150I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-166 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-166I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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