參數(shù)資料
型號: GS881Z36T-100I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 8Mb Pipelined and Flow Through Synchronous NBT SRAMs
中文描述: 256K X 36 ZBT SRAM, 12 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 18/34頁
文件大?。?/td> 542K
代理商: GS881Z36T-100I
Rev: 1.10 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
18/34
1998, Giga Semconductor, Inc.
Preliminary
.
GS881Z18/36T-11/100/80/66
Operating Currents
Parameter
Test Conditions
Symbol
-11
-100
-80
-66
Unit
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
Operating
Current
Device Selected;
All other inputs
V
IH
or
V
IL
Output open
I
DD
Pipeline
I
DD
Flow-through
I
SB
Pipeline
I
SB
Flow-through
I
DD
Pipeline
I
DD
Flow-through
210
220
210
220
190
200
170
180
mA
150
160
150
160
130
140
130
140
mA
Standby
Current
ZZ
V
DD
– 0.2 V
30
40
30
40
30
40
30
40
mA
30
40
30
40
30
40
30
40
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
80
90
80
90
70
80
65
75
mA
65
75
65
75
55
65
55
65
mA
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