參數(shù)資料
型號: GS881E36T-80
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 14 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 16/34頁
文件大?。?/td> 487K
代理商: GS881E36T-80
Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
16/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
Operating Currents
Parameter
Test Conditions
Symbol
-11
-11.5
-100
-80
-66
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
I
DD
Pipeline
I
DD
Flow-Thru
I
SB
Pipeline
I
SB
Flow-Thru
I
DD
Pipeline
I
DD
Flow-Thru
225
235
225
235
225
235
200
210
185
195
mA
180
190
180
190
180
190
175
185
165
175
mA
Standby
Current
ZZ
V
DD
- 0.2V
30
40
30
40
30
40
30
40
30
40
mA
30
40
30
40
30
40
30
40
30
40
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
80
90
80
90
80
90
70
80
60
70
mA
65
75
65
75
65
75
55
65
50
60
mA
相關(guān)PDF資料
PDF描述
GS881E36T-80I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-100 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-100I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-11 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-11.5 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
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