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參數(shù)資料
| 型號： | GS881E36T-66I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| 中文描述： | 256K X 36 CACHE SRAM, 18 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 13/34頁 |
| 文件大?。?/td> | 487K |
| 代理商： | GS881E36T-66I |
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Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
13/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute MaximumRatings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute MaximumRatings, for an extended period of time, may affect reliability of
this component.
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V
≤
V
DDQ
≤
2.375 V
(i.e., 2.5 V I/O) and 3.6 V
≤
V
DDQ
≤
3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–0.5 to 4.6
V
–0.5 to V
DD
V
Voltage on Clock Input Pin
–0.5 to 6
V
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/–20
mA
Output Current on Any I/O Pin
+/–20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–55 to 125
o
C
T
BIAS
Temperature Under Bias
–55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Mn.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
3.135
3.3
3.6
V
I/O Supply Voltage
V
DDQ
2.375
2.5
V
DD
V
1
Input High Voltage
V
IH
1.7
—
V
DD
+0.3
V
2
Input Low Voltage
V
IL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
3
Ambient Temperature (Industrial Range Versions)
T
A
–40
25
85
°
C
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS881E36T-80 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-80I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-100 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-100I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| GS881E36T-80 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-80I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
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| GS881EV18BT-333 | 制造商:GSI Technology 功能描述:512K X 18 (9 MEG) SYNCH BURST , DCD, JTAG - Trays |
| GS881V18BD-250 | 制造商:GSI Technology 功能描述:512K X 18 (9 MEG) SYNCH BURST , SCD, JTAG - Trays |
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