參數資料
型號: GS881E32BGD-150I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 32 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數: 14/39頁
文件大?。?/td> 815K
代理商: GS881E32BGD-150I
GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)
Rev: 1.04a 3/2009
21/39
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
3.3
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
2.5
2.5
2.5
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ1
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.0
1.0
1.2
1.4
1.5
ns
Hold time
tH
0.1
0.1
0.2
0.4
0.5
ns
Flow
Through
Clock Cycle Time
tKC
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ1
2.0
2.0
2.0
2.0
2.0
ns
Setup time
tS
1.3
1.4
1.5
1.5
1.5
ns
Hold time
tH
0.3
0.4
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.0
1.0
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.2
1.2
1.5
1.5
1.7
ns
Clock to Output in
High-Z
tHZ1
1.5
2.5
1.5
2.5
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
2.5
2.5
3.0
3.8
ns
G to output in Low-Z
tOLZ1
0
0
0
0
0
ns
G to output in High-Z
tOHZ1
2.5
2.5
2.5
3.0
3.8
ns
ZZ setup time
tZZS2
5
5
5
5
5
ns
ZZ hold time
tZZH2
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
ns
相關PDF資料
PDF描述
GS881E32BGD-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-200I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-250I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS881E32BGD-150IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-150V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs