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參數(shù)資料
| 型號： | GS881E18T-80 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 14 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 487K |
| 代理商： | GS881E18T-80 |
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Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
1/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
512K x 18, 256K x 36 ByteSafe
8Mb Sync Burst SRAMs
100 MHz–66 MHz
3.3 V V
DD
3.3 V and 2.5 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
1.10 9/2000Features
FT pin for user-configurable flow through or pipelined
operation
Dual Cycle Deselect (DCD) operation
IEEE 1149.1 JTAG-compatible Boundary Scan
On-chip write parity checking; even or odd selectable
3.3 V +10%/–5% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Common data inputs and data outputs
Clock Control, registered, address, data, and control
Internal self-timed write cycle
Automatic power-down for portable applications
100-lead TQFP package
-11
-11.5
Pipeline
3-1-1-1
t
KQ
I
DD
Flow
Through
2-1-1-1
I
DD
Functional Description
Applications
The GS881E18//36T is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
DCD Pipelined Reads
The GS881E18//36T is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the byte write
control inputs.
ByteSafe Parity Functions
The GS881E18/36T features ByteSafe data security functions.
See detailed discussion following.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(high) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS881E18//36T operates on a 3.3 V power supply, and all
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuit.
-100
10 ns
4.0 ns
225 mA
-80
-66
15 ns
5.0 ns
185 mA
tCycle
10 ns
4.0 ns
225 mA
10 ns
4.0 ns
225 mA
12.5 ns
4.5 ns
200 mA
t
KQ
tCycle
11 ns
15 ns
180 mA
11.5 ns
15 ns
180 mA
12 ns
15 ns
180 mA
14 ns
15 ns
175 mA
18 ns
20 ns
165 mA
相關PDF資料 |
PDF描述 |
|---|---|
| GS881E18T-80I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-100 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36BT-250IV | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BGT-250V | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BT-150IV | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS881E18T-80I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E32AD-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E32AD-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E32AD-133IT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
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