參數(shù)資料
型號: GS881E18BGT-333
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 4.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 15/40頁
文件大小: 609K
代理商: GS881E18BGT-333
GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)
Rev: 1.04 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/40
2002, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關PDF資料
PDF描述
GS881E18BGT-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-333 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS881E18BGT-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT-150IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs