參數(shù)資料
型號(hào): GS881E18BGT-250I
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 5.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù): 21/40頁(yè)
文件大?。?/td> 609K
代理商: GS881E18BGT-250I
GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)
Rev: 1.04 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
21/40
2002, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
3.3
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
2.5
2.5
2.5
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.0
1.0
1.2
1.4
1.5
ns
Hold time
tH
0.1
0.1
0.2
0.4
0.5
ns
Flow
Through
Clock Cycle Time
tKC
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
2.0
2.0
ns
Setup time
tS
1.3
1.4
1.5
1.5
1.5
ns
Hold time
tH
0.3
0.4
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.0
1.0
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.2
1.2
1.5
1.5
1.7
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
2.5
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
2.5
2.5
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
2.5
2.5
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
ns
相關(guān)PDF資料
PDF描述
GS881E18BGT-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-333 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E18BGT-250IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-250V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-300 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-333 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-333I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs