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參數(shù)資料
| 型號： | GS8662S09E-167 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| 中文描述： | 8M X 9 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 |
| 文件頁數(shù)： | 26/37頁 |
| 文件大?。?/td> | 960K |
| 代理商： | GS8662S09E-167 |
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Preliminary
GS8662S08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
26/37
2005, GSI Technology
C Controlled Write-First Timing Diagram
NOP
Write A
Read B
Write C
Write D
Read E
Deselect
A
B
C
D
E
A
A+1
C
C+1
D
D+1
A
A+1
C
C+1
D
D+1
B
B+1
CQHQX
CQHQV
CHQZ
CHQV
CHQX
CHQX1
KH#KH
KLKH
KHKL
KHKH
KHDX
DVKH
KHIX
IVKH
KHIX
IVKH
KHIX
IVKH
KHAX
AVKH
KH#KH
KLKH
KHKL
KHKH
K
K
Addr
LD
R/W
BWx
D
C
C
Q
CQ
CQ
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with the current IEEE Standard, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with V
DD
. The JTAG output
drivers are powered by V
DD
.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either V
DD
or V
SS
. TDO should be left unconnected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8662S09E-167I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-200 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-200I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-250 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS88136AD-133 | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8662S09E-167I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S09E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
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