參數(shù)資料
型號: GS8662S08GE-333I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Burst of 2 DDR SigmaSIO-II SRAM
中文描述: 8M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165
文件頁數(shù): 17/37頁
文件大小: 960K
代理商: GS8662S08GE-333I
Preliminary
GS8662S08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
17/37
2005, GSI Technology
HSTL I/O DC Input Characteristics
Parameter
Symbol
Min
Max
Units
Notes
DC Input Logic High
V
IH
(dc)
V
REF
+ 0.1
V
DDQ
+ 0.3
mV
1
DC Input Logic Low
Note:
Compatible with both 1.8 V and 1.5 V I/O drivers
HSTL I/O AC Input Characteristics
V
IL
(dc)
–0.3
V
REF
– 0.1
mV
1
Parameter
Symbol
Min
Max
Units
Notes
AC Input Logic High
V
IH
(ac)
V
REF
+ 0.2
mV
3,4
AC Input Logic Low
V
IL
(ac)
V
REF
– 0.2
mV
3,4
V
REF
Peak to Peak AC Voltage
Notes:
1.
The peak to peak AC component superimposed on V
REF
may not exceed 5% of the DC component of V
REF
.
2.
To guarantee AC characteristics, V
IH
,V
IL
, Trise, and Tfall of inputs and clocks must be within 10% of each other.
3.
For devices supplied with HSTL I/O input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
4.
See AC Input Definition drawing below.
V
REF
(ac)
5% V
REF
(DC)
mV
1
V
IH
(ac)
V
REF
V
IL
(ac)
HSTL I/O AC Input Definitions
20% tKHKH
V
SS
– 1.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKHKH
V
DD
+ 1.0 V
50%
V
DD
V
IL
相關(guān)PDF資料
PDF描述
GS8662S09E-167 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09E-167I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09E-200 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09E-200I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09E-250 72Mb Burst of 2 DDR SigmaSIO-II SRAM
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