參數(shù)資料
型號(hào): GS8662S08GE-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Burst of 2 DDR SigmaSIO-II SRAM
中文描述: 8M X 8 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165
文件頁(yè)數(shù): 33/37頁(yè)
文件大小: 960K
代理商: GS8662S08GE-300
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min.
Max
Unit
TCK Cycle Time
t
CHCH
50
ns
TCK High Pulse Width
t
CHCL
20
ns
TCK Low Pulse Width
t
CLCH
20
ns
TMS Input Setup Time
t
MVCH
5
ns
TMS Input Hold Time
t
CHMX
5
ns
TDI Input Setup Time
t
DVCH
5
ns
TDI Input Hold Time
t
CHDX
5
ns
SRAM Input Setup Time
t
SVCH
5
ns
SRAM Input Hold Time
t
CHSX
5
ns
Clock Low to Output Valid
t
CLQV
0
10
ns
Preliminary
GS8662S08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
33/37
2005, GSI Technology
相關(guān)PDF資料
PDF描述
GS8662S08GE-300I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08GE-333 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08GE-333I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09E-167 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09E-167I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662S08GE-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08GE-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08GE-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S09BD-400 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8662S09E-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM