參數(shù)資料
型號： GS8662Q09E-300I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 72Mb SigmaQuad-II Burst of 2 SRAM
中文描述： 8M X 9 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 15 X17 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)： 20/35頁
文件大?。?/td> 993K
代理商： GS8662Q09E-300I
Preliminary
GS8662Q08/09/18/36E-300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
20/35
2005, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units
Notes
Output High Voltage
V
OH1
V
DDQ
/2 – 0.12
V
DDQ
/2 + 0.12
V
1, 3
Output Low Voltage
V
OL1
V
DDQ
/2 – 0.12
V
DDQ
/2 + 0.12
V
2, 3
Output High Voltage
V
OH2
V
DDQ
– 0.2
V
DDQ
V
4, 5
Output Low Voltage
V
OL2
Vss
0.2
V
4, 6
Notes:
1.
2.
3.
4.
5.
6.
I
OH
= (V
DDQ
/2) / (RQ/5) +/– 15% @ V
OH
= V
DDQ
/2 (for: 175
≤
RQ
≤
350
).
I
OL
= (V
DDQ
/2) / (RQ/5) +/– 15% @ V
OL
= V
DDQ
/2 (for: 175
≤
RQ
≤
350
)
.
Parameter tested with RQ = 250
and V
DDQ
= 1.5 V or 1.8 V
Minimum Impedance mode, ZQ = V
SS
I
OH
= –1.0 mA
I
OL
= 1.0 mA
Operating Currents
Parameter
Symbol
Test Conditions
-300
-250
-200
-167
Notes
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating Current (x36): DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
900 mA
920 mA
800 mA
820 mA
670 mA
690 mA
590 mA
610 mA
2, 3
Operating Current (x18): DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
840 mA
860 mA
740 mA
760 mA
620 mA
640 mA
550 mA
570 mA
2, 3
Operating Current (x9): DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
840 mA
860 mA
740 mA
760 mA
620 mA
640 mA
550 mA
570 mA
2, 3
Operating Current (x8): DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
840 mA
860 mA
740 mA
760 mA
620 mA
640 mA
550 mA
570 mA
2, 3
Standby Current (NOP): DDR
I
SB1
Device deselected,
I
OUT
= 0 mA, f = Max,
All Inputs
≤
0.2 V or
≥
V
DD
– 0.2 V
330 mA
340 mA
300 mA
310 mA
280 mA
290 mA
260 mA
270 mA
2, 4
Notes:
1.
2.
3.
4.
Power measured with output pins floating.
Minimum cycle, I
OUT
= 0 mA
Operating current is calculated with 50% read cycles and 50% write cycles.
Standby Current is only after all pending read and write burst operations are completed.
相關PDF資料
PDF描述
GS8662Q09GE-167 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-167I 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-200 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-200I 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-250 72Mb SigmaQuad-II Burst of 2 SRAM
相關代理商/技術參數(shù)
參數(shù)描述
GS8662Q09GE-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-167I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE250 制造商:GSI TECHNOLOGY 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*