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參數資料
| 型號： | GS8644Z36E-250V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數： | 13/30頁 |
| 文件大?。?/td> | 744K |
| 代理商： | GS8644Z36E-250V |
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Preliminary
GS8644Z18/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
13/30
2003, GSI Technology
V
DDQ2
& V
DDQ1
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
= 0 V
4
5
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0 V
6
7
pF
Note:
These parameters are sample tested.
= 2.5 V)
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| GS881E18BD-300 | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-300I | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8644Z36GB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 7.5NS/3.8NS 119FPBGA - Trays |
| GS8644Z36GE-166IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 2MX36 7NS/2.9NS 165FBGA - Trays |
| GS8644Z36GE-250I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 6.5NS/2.5NS 165FPBGA - Trays |
| GS8644Z36GE-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 2MX36 6.5NS/2.3NS 165FBGA - Trays |
| GS8644Z36GE-250V | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 2MX36 6.5NS/2.3NS 165FBGA - Trays |
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