參數(shù)資料
型號: GS8644Z36E-225V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù): 29/30頁
文件大?。?/td> 744K
代理商: GS8644Z36E-225V
Preliminary
GS8644Z18/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
29/30
2003, GSI Technology
4M x 18
GS8644Z18E-250
NBT MCM
1.8 V or 2.5 V
165 BGA
250/6.5
C
PQ
4M x 18
GS8644Z18E-225V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
C
PQ
4M x 18
GS8644Z18E-200V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
C
PQ
4M x 18
GS8644Z18E-166V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
166/8
C
PQ
4M x 18
GS8644Z18E-150V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
C
PQ
4M x 18
GS8644Z18E-133V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
C
PQ
2M x 36
GS8644Z36E-250V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
C
PQ
2M x 36
GS8644Z36E-225V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
C
PQ
2M x 36
GS8644Z36E-200V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
C
PQ
2M x 36
GS8644Z36E-166V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
166/8
C
PQ
2M x 36
GS8644Z36E-150V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
C
PQ
2M x 36
GS8644Z36E-133V
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
C
PQ
4M x 18
GS8644Z18E-250IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
I
PQ
4M x 18
GS8644Z18E-225IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
I
PQ
4M x 18
GS8644Z18E-200IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
I
PQ
4M x 18
GS8644Z18E-166IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
166/8
I
PQ
4M x 18
GS8644Z18E-150IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
I
PQ
4M x 18
GS8644Z18E-133IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
I
PQ
2M x 36
GS8644Z36E-250IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
I
PQ
2M x 36
GS8644Z36E-225IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
I
PQ
2M x 36
GS8644Z36E-200IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
I
PQ
2M x 36
GS8644Z36E-166IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
166/8
I
PQ
2M x 36
GS8644Z36E-150IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
I
PQ
2M x 36
GS8644Z36E-133IV
NBT MCM
1.8 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
I
PQ
Ordering Information for GSI NBT SRAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8644Z18B-150IB.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
5.
相關(guān)PDF資料
PDF描述
GS8644Z36E-250IV 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644Z36E-250V 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS881E18BD-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BD-250I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BD-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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