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參數(shù)資料
| 型號： | GS8644Z36E-200V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 14/30頁 |
| 文件大小： | 744K |
| 代理商： | GS8644Z36E-200V |
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AC Test Conditions
Parameter
Conditions
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
Figure 1
Input high level
V
DD
– 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
V
DD
/2
Output reference level
V
DDQ
/2
Output load
Fig. 1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
Preliminary
GS8644Z18/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
14/30
2003, GSI Technology
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
–
1 uA
1 uA
FT, ZQ, ZZ Input Current
I
IN
V
DD
≥
V
IN
≥
0 V
–
100 uA
100 uA
Output Leakage Current
I
OL
Output Disable, V
OUT
= 0 to V
DD
–
1 uA
1 uA
DC Output Characteristics (1.8 V/2.5 V Version)
Parameter
Symbol
Test Conditions
Min
Max
1.8 V Output High Voltage
V
OH1
I
OH
=
–
4 mA, V
DDQ
= 1.6 V
V
DDQ
– 0.4 V
—
2.5 V Output High Voltage
V
OH2
I
OH
=
–
8 mA, V
DDQ
= 2.375 V
1.7 V
—
1.8 V Output Low Voltage
V
OL1
I
OL
= 4 mA
—
0.4 V
2.5 V Output Low Voltage
V
OL2
I
OL
= 8 mA
—
0.4 V
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| GS8644Z36E-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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