參數(shù)資料
型號(hào)： GS8640Z36T-200IV
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述： 2M X 36 ZBT SRAM, 7.5 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 11/22頁(yè)
文件大?。?/td> 600K
代理商： GS8640Z36T-200IV
GS8640Z18/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
11/22
2004, GSI Technology
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
Mode Pin Functions
Mode Name
Pin Name
State
L
H
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
H
Note:
There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in
the default states as specified in the above table.
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Burst Counter Sequences
BPR 1999.05.18
相關(guān)PDF資料
PDF描述
GS8640Z36T-200V 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-250IV 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-250V 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640ZV36T-167I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640ZV18GT-167 72Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8640Z36T-200V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-250 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-250I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-250IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-250V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
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