參數(shù)資料
型號(hào)： GS864032T-200V
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述： 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 16/23頁(yè)
文件大小： 603K
代理商： GS864032T-200V
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-167
Unit
Min
4.0
—
1.5
Max
—
3.0
—
Min
5.0
—
1.5
Max
—
3.0
—
Min
6.0
—
1.5
Max
—
3.5
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.5
0.2
6.5
—
3.0
—
—
—
6.5
—
1.5
0.4
7.5
—
3.0
—
—
—
7.5
—
1.5
0.5
8.0
—
3.0
—
—
—
8.0
—
ns
ns
ns
ns
ns
Flow Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
—
3.0
—
3.0
—
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.7
—
—
—
—
1.5
0.5
1.3
1.7
—
—
—
—
1.5
0.5
1.3
1.7
—
—
—
—
ns
ns
ns
ns
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
tOE
—
2.5
—
3.0
—
3.5
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.5
—
3.0
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
ns
ZZ recovery
20
—
20
—
20
—
ns
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
16/23
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料
PDF描述
GS864032T-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864036GT-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864036GT-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864036GT-200IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864032T-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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