參數(shù)資料
型號: GS864032GT-250V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 32 CACHE SRAM, 6.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 10/23頁
文件大?。?/td> 603K
代理商: GS864032GT-250V
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
10/23
2004, GSI Technology
Simplified State Diagram
相關(guān)PDF資料
PDF描述
GS864032T-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-200V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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GS864032T-167IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs