參數(shù)資料
型號(hào): GS864018T-250V
廠(chǎng)商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 20/23頁(yè)
文件大?。?/td> 603K
代理商: GS864018T-250V
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
20/23
2004, GSI Technology
TQFP Package Drawing (Package T)
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
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