參數(shù)資料
型號(hào)： GS864018GT-250
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述： 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝： ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù)： 12/24頁(yè)
文件大?。?/td> 609K
代理商： GS864018GT-250
GS864018/32/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
12/24
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS864018GT-250I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-300I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864018GT-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 100TQFP - Trays
GS864018GT-250IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 6.5NS/3NS 100TQFP - Trays
GS864018GT-250V 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 4MX18 6.5NS/3NS 100TQFP - Trays
GS864018GT-300 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 3.3V 72MBIT 4MX18 5.5NS/2.3NS 100TQFP - Trays
GS864018GT-300I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 100TQFP - Trays
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