參數(shù)資料
型號: GS842Z18CB-250T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 18 ZBT SRAM, 5.5 ns, PBGA119
封裝: FPBGA-119
文件頁數(shù): 8/29頁
文件大小: 248K
代理商: GS842Z18CB-250T
GS842Z18CB/GS842Z36CB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 8/2011
16/29
2011, GSI Technology
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-166
-150
-100
Un
it
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
5.5
6.0
6.7
10
ns
Clock to Output Valid
tKQ
2.5
3.0
3.5
3.8
4.5
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ1
1.5—1.5—1.5—
1.5
1.5
ns
Setup time
tS
1.2
1.4
1.5
1.5
2.0
ns
Hold time
tH
0.2—0.4—0.5—
0.5
0.5
ns
Flow
Through
Clock Cycle Time
tKC
5.5
6.5
7.0
7.5
12.0
ns
Clock to Output Valid
tKQ
5.5
6.5
7.0
7.5
12.0
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ1
2.0—2.0—2.0—
2.0
2.0
ns
Setup time
tS
1.5
1.5
1.5
1.5
2.0
ns
Hold time
tH
0.5—0.5—0.5—
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
1.3
ns
Clock LOW Time
tKL
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in High-Z
tHZ1
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
5
ns
G to Output Valid
tOE
2.5
3.0
3.5
3.8
5
ns
G to output in Low-Z
tOLZ1
0—0—0
0
0
ns
G to output in High-Z
tOHZ1
—2.5
—3.0
3.0
5
ns
ZZ setup time
tZZS2
5—5—5
5
5
ns
ZZ hold time
tZZH2
1—1—1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
ns
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