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參數(shù)資料
| 型號： | GS832436B-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 1M X 36 CACHE SRAM, 6 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, BGA-119 |
| 文件頁數(shù)： | 6/46頁 |
| 文件大?。?/td> | 1149K |
| 代理商： | GS832436B-250I |
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Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
6/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
D6
G
I
Output Enable; active low
A7
ADV
I
Burst address counter advance enable; active low
A5, A6
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
P6
ZZ
I
Sleep Mode control; active high
L6
FT
I
Flow Through or Pipeline mode; active low
T6
LBO
I
Linear Burst Order mode; active low
N6
SCD
I
Single Cycle Deselect/Dual Cycle Deselect Mode Control (
x72/x36 Versions)
G6
MCH
I
Must Connect High
A4
MCH
I
Must Connect High (x18 version)
H6, J6, K6, M6
MCL
Must Connect Low
A8, N6
MCL
Must Connect Low (x18 version)
B6
BW
I
Byte Enable; active low
F6
ZQ
I
FLXDrive Output Impedance Control
(Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
W3
TMS
I
Scan Test Mode Select
W4
TDI
I
Scan Test Data In
W8
TDO
O
Scan Test Data Out
W9
TCK
I
Scan Test Clock
E5, E6, E7, G5, G7, J5, J7, L5, L7, N5, N7, R5,
R6, R7
D3, D9, F3, F4, F5, F7, F8, F9, H3, H4, H5, H7,
H8, H9, K5, K7, M3, M4, M5, M7, M8, M9, P3,
P4, P5, P7, P8, P9, T3, T9
E3, E4, E8, E9, G3, G4, G8, G9, J3, J4, J8, J9,
L3, L4, L8, L9, N3, N4, N8, N9, R3, R4, R8, R9
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
GS832418/36/72 209-Bump BGA Pin Description
Pin Location
Symbol
Type
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS832436C-133 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-166 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-166I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-200 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832418B-200I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8324Z36B-133 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays |
| GS8324Z36B-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
| GS8324Z72C200 | 制造商:G.S.I. 功能描述: |
| GS8342D06BD-350 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D06BD-500 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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