參數(shù)資料
型號(hào): GS832436B-225I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 6 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁(yè)數(shù): 31/46頁(yè)
文件大?。?/td> 1149K
代理商: GS832436B-225I
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
31/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Pipelined DCD Read-Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
E
1
G
WR1
Q1
A
D1
A
Q2
A
Q2
B
Q2c
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS
tS
tH
tS
tH
tH
tS tH
tS tH
tStH
tKH
ADSC initiated read
E
1
masks ADSP
DQ
A
–DQ
D
tKL
tKC
tS
tH
Single Write
ADSP is blocked by E1 inactive
tKQ
tS tH
Hi-Z
B
A
–B
D
RD1
RD2
tS tH
A
0
–An
WR1
相關(guān)PDF資料
PDF描述
GS832436B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436C-133 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-166 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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