參數(shù)資料
型號(hào): GS832436B-200I
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁(yè)數(shù): 39/46頁(yè)
文件大?。?/td> 1149K
代理商: GS832436B-200I
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
39/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
JTAG Port Timing Diagram
JTAG Port AC Electrical Characteristics
Parameter
TCK Cycle Time
TCK Low to TDO Valid
TCK High Pulse Width
TCK Low Pulse Width
TDI & TMS Set Up Time
TDI & TMS Hold Time
Symbol
tTKC
tTKQ
tTKH
tTKL
tTS
tTH
Min
50
20
20
10
10
Max
20
Unit
ns
ns
ns
ns
ns
ns
tTKQ
tTS
tTH
tTKH
tTKL
TCK
TMS
TDI
TDO
tTKC
相關(guān)PDF資料
PDF描述
GS832436B-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436C-133 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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