參數(shù)資料
      型號(hào): GS8322ZV18B-225
      廠商: GSI TECHNOLOGY
      元件分類: DRAM
      英文描述: 36Mb Pipelined and Flow Through Synchronous NBT SRAM
      中文描述: 2M X 18 ZBT SRAM, 7 ns, PBGA119
      封裝: 14 X 22 MM, 1.27 PITCH, FPBGA-119
      文件頁(yè)數(shù): 17/39頁(yè)
      文件大小: 975K
      代理商: GS8322ZV18B-225
      GS8322ZV18(B/E)/GS8322ZV36(B/E)/GS8322ZV72(C)
      Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
      Rev: 1.03a 2/2006
      17/39
      2002, GSI Technology
      Sleep Mode
      During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
      the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
      low, the SRAM operates normally after 2 cycles of wake up time.
      Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I
      SB
      2. The duration of
      Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
      disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
      When the ZZ pin is driven high, I
      SB
      2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
      operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
      until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
      may be applied while the SRAM is recovering from Sleep mode.
      Sleep Mode Timing Diagram
      tZZR
      tZZH
      tZZS
      tKL
      tKH
      tKC
      CK
      ZZ
      Designing for Compatibility
      The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal. Not
      all vendors offer this option, however most mark the pin V
      DD
      or V
      DDQ
      on pipelined parts and V
      SS
      on flow through parts. GSI NBT
      SRAMs are fully compatible with these sockets. Other vendors mark the pin as a No Connect (NC). GSI RAMs have an internal
      pull-up device on the FT pin so a floating FT pin will result in pipelined operation. If the part being replaced is a pipelined mode
      part, the GSI RAM is fully compatible with these sockets. In the unlikely event the part being replaced is a Flow Through device,
      the pin will need to be pulled low for correct operation.
      相關(guān)PDF資料
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