參數(shù)資料
型號(hào)： GS8322Z36B-225V
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 36Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述： 1M X 36 ZBT SRAM, 7 ns, PBGA119
封裝： 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁(yè)數(shù)： 16/39頁(yè)
文件大?。?/td> 973K
代理商： GS8322Z36B-225V
GS8322Z18/36/72(B/E/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
16/39
2002, GSI Technology
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
FLXDrive
The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive
strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details.
Mode Pin Functions
Mode Name
Pin Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, I
DD
= I
SB
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
Note:
There are pull-up devices on the ZQ and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip
will operate in the default states as specified in the above tables.
相關(guān)PDF資料
PDF描述
GS8322Z36B-250IV 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z36B-250V 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z36E-133IV 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z36E-133V 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z36E-150IV 36Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8322Z36B-250 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 36MBIT 1MX36 6.5NS/2.5NS 119FBGA - Trays
GS8322Z36B-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 6.5NS/2.5NS 119FBGA - Trays
GS8322Z36B-250V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 6.5NS/3NS 119FPBGA - Trays
GS8322Z36E-133 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 8.5NS/4NS 165FBGA - Trays
GS8322Z36E-133I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 8.5NS/4NS 165FBGA - Trays
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