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參數(shù)資料
| 型號： | GS832272C-200I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 200萬× 18，100萬× 36，為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 17/41頁 |
| 文件大?。?/td> | 1223K |
| 代理商： | GS832272C-200I |
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Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
17/41
2001, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS832272C-225 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832272C-225I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832272C-250 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832218 | 256K SERIAL CONFIGURATION PROM |
| GS832218B | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS832272C-225 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 36MBIT 512KX72 7NS/3NS 209FBGA - Trays |
| GS832272C-250I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 36MBIT 512KX72 6.5NS/3NS 209FBGA - Trays |
| GS832272C-250I/T/R/COLLINS | 制造商:GSI Technology 功能描述:512K X 72 (36 MEG) SYNCH BURST, SCD, JTAG, FLEXDRIVE - Tape and Reel |
| GS832272C-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 36MBIT 512KX72 6.5NS/3NS 209BGA - Trays |
| GS832272GC-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
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