參數(shù)資料
型號(hào): GS832236E-250I
廠商: Electronic Theatre Controls, Inc.
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 200萬(wàn)× 18,100萬(wàn)× 36,為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 22/41頁(yè)
文件大?。?/td> 1223K
代理商: GS832236E-250I
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
22/41
2001, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
4.4
5.0
6.0
6.7
7.5
ns
Clock to Output Valid (x18/x36)
tKQ
2.5
2.7
3.0
3.5
3.8
4.0
ns
Clock to Output Valid (x72)
tKQ
3.0
3.0
3.0
3.5
3.8
4.0
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.2
1.3
1.4
1.5
1.5
1.5
ns
Hold time
tH
0.2
0.3
0.4
0.5
0.5
0.5
ns
Flow
Through
Clock Cycle Time
tKC
6.5
7.0
7.5
8.0
8.5
8.5
ns
Clock to Output Valid
tKQ
6.5
7.0
7.5
8.0
8.5
8.5
ns
Clock to Output Invalid
tKQX
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock to Output in Low-Z
tLZ
1
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
tS
1.5
1.5
1.5
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
1.5
1.7
ns
Clock LOW Time
tKL
1.5
1.5
1.5
1.5
1.7
2
ns
Clock to Output in
High-Z (x18/x36)
tHZ
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
Clock to Output in
High-Z (x72)
tHZ
1
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
(x18/x36)
tOE
2.5
2.7
3.0
3.5
3.8
4.0
ns
G to Output Valid
(x72)
tOE
3.0
3.0
3.0
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z (x18/x36)
tOHZ
1
2.5
2.7
3.0
3.0
3.0
3.0
ns
G to output in High-Z (x72)
tOHZ
1
3.0
3.0
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
20
ns
相關(guān)PDF資料
PDF描述
GS832272C-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832272C-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832272C-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832272C-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832272C-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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GS832236GB-200E 制造商:GSI Technology 功能描述:GS832236GB-200E - Trays
GS832236GB-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS832236GB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS832236GB-200V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays