- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383047 > GS832236B-166I (Electronic Theatre Controls, Inc.) 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號： | GS832236B-166I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 200萬× 18，100萬× 36，為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 17/41頁 |
| 文件大?。?/td> | 1223K |
| 代理商： | GS832236B-166I |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
17/41
2001, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料 |
PDF描述 |
|---|---|
| GS832236B-200 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832236B-200I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832236B-225 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832236B-225I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS832236B-250 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS832236B-225 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7NS/2.7NS 119FBGA - Trays |
| GS832236B-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 6.5NS/2.5NS 119FBGA - Trays |
| GS832236E-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 8.5NS/3.8NS 165FBGA - Trays |
| GS832236E-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 8.5NS/3.8NS 165FBGA - Trays |
| GS832236E-150IT | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 36MBIT 1MX36 8.5NS/3.8NS 165FBGA - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。