參數(shù)資料
型號(hào): GS832236
廠商: Electronic Theatre Controls, Inc.
英文描述: 64K 3.3 VOLT SERIAL CONFIGURATION PROM
中文描述: 200萬(wàn)× 18,100萬(wàn)× 36,為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 13/41頁(yè)
文件大?。?/td> 1223K
代理商: GS832236
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
13/41
2001, GSI Technology
Byte Write Truth Table
Notes:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C
, and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x36 version.
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
相關(guān)PDF資料
PDF描述
GS832236E 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832236E-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832236E-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832236E-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832236E-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832236AB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-200I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-200IV 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS832236AB-200V 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS832236AB-225M 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays