參數(shù)資料
型號: GS832218B-250
廠商: Electronic Theatre Controls, Inc.
英文描述: 512K 3.3 VOLT SERIAL CONFIGURATION PROM
中文描述: 200萬× 18,100萬× 36,為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 16/41頁
文件大?。?/td> 1223K
代理商: GS832218B-250
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
16/41
2001, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS832218B-250I 512K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832218E 64K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832218E-200 64K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832218E-200I 64K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832218E-225 64K 3.3 VOLT SERIAL CONFIGURATION PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832218B-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 6.5NS/2.5NS 119FBGA - Trays
GS832218B-250IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 36MBIT 2MX18 6.5NS/3NS 119FPBGA - Trays
GS832218B-250V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 36MBIT 2MX18 6.5NS/3NS 119FPBGA - Trays
GS832218E-133 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 8.5NS/4NS 165FBGA - Trays
GS832218E-133I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 8.5NS/4NS 165FBGA - Trays