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參數(shù)資料
| 型號(hào)： | GS8321Z18E-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 2M X 18 ZBT SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 8/34頁 |
| 文件大?。?/td> | 746K |
| 代理商： | GS8321Z18E-250I |
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Synchronous Truth Table
Operation
Type
Address
CK CKE ADV W Bx E
1
E
2
E
3
G ZZ
DQ
Notes
Read Cycle, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
L
L
Q
Read Cycle, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
L
L
Q
1,10
NOP/Read, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
H
L
High-Z
2
Dummy Read, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
H
L
High-Z
1,2,10
Write Cycle, Begin Burst
W
External
L-H
L
L
L
L
L
H
L
X
L
D
3
Write Cycle, Continue Burst
B
Next
L-H
L
H
X
L
X
X
X
X
L
D
1,3,10
Write Abort, Continue Burst
B
Next
L-H
L
H
X
H
X
X
X
X
L
High-Z 1,2,3,10
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
H
X
X
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
X
H
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
L
X
X
L
High-Z
Deselect Cycle
D
None
L-H
L
L
L
H
L
H
L
X
L
High-Z
1
Deselect Cycle, Continue
D
None
L-H
L
H
X
X
X
X
X
X
L
High-Z
1
Sleep Mode
None
X
X
X
X
X
X
X
X
X
H
High-Z
Clock Edge Ignore, Stall
Current
L-H
H
X
X
X
X
X
X
X
L
-
4
Notes:
1.
Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-
lect cycle is executed first.
Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W
pin is sampled low but no Byte Write pins are active so no write operation is performed.
G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during
write cycles.
If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus
will remain in High Z.
X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write
signals are Low
All inputs, except G and ZZ must meet setup and hold times of rising clock edge.
Wait states can be inserted by setting CKE high.
This device contains circuitry that ensures all outputs are in High Z during power-up.
A 2-bit burst counter is incorporated.
10. The address counter is incriminated for all Burst continue cycles.
2.
3.
4.
5.
6.
7.
8.
9.
GS8321Z18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06b 2/2006
8/34
2003, GSI Technology
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8321Z18GE-133 | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18GE-133I | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18GE-150 | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18GE-150I | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18GE-166 | 36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8321Z18E-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 6.5NS/2.5NS 165FPBGA - Trays |
| GS8321Z18E-250V | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 6.5NS/2.5NS 165FPBGA - Trays |
| GS8321Z18E-V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18GE-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS8321Z18GE-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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