參數(shù)資料
型號: GS8321V32GE-133
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 1M X 32 CACHE SRAM, 8.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁數(shù): 10/31頁
文件大小: 735K
代理商: GS8321V32GE-133
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
GS8321V18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
10/31
2003, GSI Technology
Simplified State Diagram
相關PDF資料
PDF描述
GS8321V32GE-133I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-150 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-150I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-166 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-166I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS8321V32GE-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32GE-166I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs