參數(shù)資料
型號(hào): GS832136GE-250V
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù): 26/31頁(yè)
文件大?。?/td> 745K
代理商: GS832136GE-250V
GS832118/32/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
26/31
2003, GSI Technology
JTAG Port Timing Diagram
tTH
tTS
tTKQ
tTH
tTS
tTH
tTS
tTKL
tTKH
tTKC
TCK
TDI
TMS
TDO
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
ns
TCK Low to TDO Valid
tTKQ
20
ns
TCK High Pulse Width
tTKH
20
ns
TCK Low Pulse Width
tTKL
20
ns
TDI & TMS Set Up Time
tTS
10
ns
TDI & TMS Hold Time
tTH
10
ns
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
相關(guān)PDF資料
PDF描述
GS8322V72GC-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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參數(shù)描述
GS8321E18AD-250 制造商:GSI Technology 功能描述:165 BGA - Bulk
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