- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385318 > GS832136GE-225V (GSI TECHNOLOGY) 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS832136GE-225V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| 中文描述： | 1M X 36 CACHE SRAM, 6 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數(shù)： | 16/31頁 |
| 文件大?。?/td> | 745K |
| 代理商： | GS832136GE-225V |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
—
4.4
—
5.0
—
6.0
—
6.7
—
7.5
—
ns
Clock to Output Valid
tKQ
—
3.0
—
3.0
—
3.0
—
3.5
—
3.8
—
4.0
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ
1
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.2
—
0.3
—
0.4
—
0.5
—
0.5
—
0.5
—
ns
Flow
Through
Clock Cycle Time
tKC
5.5
—
6.0
—
6.5
—
7.0
—
7.5
—
8.5
—
ns
Clock to Output Valid
tKQ
—
5.5
—
6.0
—
6.5
—
7.0
—
7.5
—
8.5
ns
Clock to Output Invalid
tKQX
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Output in Low-Z
tLZ
1
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.3
—
1.3
—
1.5
—
1.7
—
ns
Clock LOW Time
tKL
1.7
—
1.7
—
1.7
—
1.7
—
1.7
—
2
—
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
2.7
—
3.0
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.5
—
2.7
—
3.0
—
3.0
—
3.0
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
20
—
ns
GS832118/32/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
16/31
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS832136GE-250IV | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832136GE-250V | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8322V72GC-250I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V18GE-225 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V18GE-225I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS832136GE-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832136GE-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832136GE-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832136GE-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E18AD-250 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。