參數(shù)資料
型號(hào): GS832136E-225IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 6 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù): 10/31頁(yè)
文件大小: 745K
代理商: GS832136E-225IV
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
GS832118/32/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
10/31
2003, GSI Technology
Simplified State Diagram
相關(guān)PDF資料
PDF描述
GS832136E-225V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-250IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-250V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832136E-225V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 6NS/3NS 165FPBGA - Trays
GS832136E-250 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 5.5NS/2.5NS 165FBGA - Trays
GS832136E-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 5.5NS/2.5NS 165FBGA - Trays
GS832136E-250IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 5.5NS/3NS 165FPBGA - Trays
GS832136E-250V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 5.5NS/3NS 165FPBGA - Trays