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參數(shù)資料
| 型號： | GS832018T-200I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| 中文描述： | 200萬× 18，100萬× 32，100萬× 36同步突發(fā)靜態(tài)存儲器分配36MB |
| 文件頁數(shù)： | 17/25頁 |
| 文件大小： | 669K |
| 代理商： | GS832018T-200I |
GS832018/32/36T-250/225/200/166/150/133
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 10/2004
17/25
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
—
1.5
Max
—
2.5
—
Min
4.4
—
1.5
Max
—
2.7
—
Min
5.0
—
1.5
Max
—
3.0
—
Min
6.0
—
1.5
Max
—
3.5
—
Min
6.7
—
1.5
Max
—
3.8
—
Min
7.5
—
1.5
Max
—
4.0
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.2
0.2
6.5
—
3.0
—
—
—
6.5
—
1.3
0.3
7.0
—
3.0
—
—
—
7.0
—
1.4
0.4
7.5
—
3.0
—
—
—
7.5
—
1.5
0.5
8.0
—
3.0
—
—
—
8.0
—
1.5
0.5
8.5
—
3.0
—
—
—
8.5
—
1.5
0.5
8.5
—
3.0
—
—
—
8.5
—
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.5
—
—
—
—
1.5
0.5
1.3
1.5
—
—
—
—
1.5
0.5
1.3
1.5
—
—
—
—
1.5
0.5
1.3
1.5
—
—
—
—
1.5
0.5
1.5
1.7
—
—
—
—
1.5
0.5
1.7
2
—
—
—
—
ns
ns
ns
ns
tHZ
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
—
2.5
—
2.7
—
3.0
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.5
—
2.7
—
3.0
—
3.0
—
3.0
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
20
—
20
—
20
—
20
—
20
—
20
—
ns
相關PDF資料 |
PDF描述 |
|---|---|
| GS832018T-225 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-225I | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-250 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-250I | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832032 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS832018T-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018T-225IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
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