參數(shù)資料
型號(hào)： GS832018T-166I
廠(chǎng)商： Electronic Theatre Controls, Inc.
元件分類(lèi)： DRAM
英文描述： 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述： 200萬(wàn)× 18，100萬(wàn)× 32，100萬(wàn)× 36同步突發(fā)靜態(tài)存儲(chǔ)器分配36MB
文件頁(yè)數(shù)： 9/25頁(yè)
文件大小： 669K
代理商： GS832018T-166I
GS832018/32/36T-250/225/200/166/150/133
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 10/2004
9/25
2003, GSI Technology
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
X
X
X
R
R
W
CR
CR
CW
CW
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Notes:
1.
X = Don’t Care, H = High, L = Low
2.
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1
3.
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5.
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
7.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
None
None
None
External
External
External
Next
Next
Next
Next
Current
Current
Current
Current
H
L
L
L
L
L
X
H
X
H
X
H
X
H
X
F
F
T
T
T
X
X
X
X
X
X
X
X
X
L
H
L
H
H
H
X
H
X
H
X
H
X
L
X
L
X
L
L
H
H
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
H
H
H
H
X
X
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
High-Z
High-Z
Q
Q
D
Q
Q
D
D
Q
Q
D
D
相關(guān)PDF資料
PDF描述
GS832018T-200 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-225 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-225I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-250 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832018T-166IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-166V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018T-200IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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