參數(shù)資料
型號: GS820E32T-138
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 2M Synchronous Burst SRAM
中文描述: 200萬同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 8/23頁
文件大小: 345K
代理商: GS820E32T-138
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
8/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagramshows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition fromRead cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAMs drivers off and for incomng data to meet
Data Input Set Up Time.
3.
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